EUROPRACTICE offers customers access to the following onsemi technologies.
onsemi Technologies | |
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I4T 45V/70V | This full featured process includes 1.8 V/3.3 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, shuttle prototyping are available. The I4T process is the only 180nm process available with deep trench isolation (DTI), which makes it uniquely suitable for high− voltage automotive applications. I4T also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and military applications. |
ONC18 18V18V
| This technology includes 1.8 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation and shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications. |
ONC18 5V30V
| This full featured process includes 1.8 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications. |
ONC18G/MS
| This technology includes 1.8 V/3.3 V dual gate I/Os, nominal and high value MIM capacitors, resistors, and six levels of metal. Specialty services including stitching, planarized passivation, and shuttle prototyping are available. ONC18 also serves as a platform for highly integrated high voltage mixed−signal processes ideal for many automotive, industrial, medical, and defense applications. |
ONC25
| The ONC25 process family is an ideal 0.25µm low cost solution to mixed−signal designs. ONC25 is designed for 2.5, 3.3, 5.0 V single−gate or 2.5 / 3.3 V or 2.5 / 5 V dual−gate operation with high−performance / low−power and mixed−signal 2.5 V or 5.0 V digital libraries, and mixed−signal features such as MIM capacitors, Schottky diodes, zener diodes, high resistivity poly, deep N−well for P−well isolation and under N−well in the digital blocks to optimize packing density. ONC25 provides the flexibility to implement a variety of mixed−signal applications. |
ONBCD25
| ONBCD25 is a full−featured high voltage 0.25µm node technology. It contains 5 V single−gate or 5/12 V dual−gate high voltage transistors combined with mixed−signal features including MIM capacitors, Schottky diodes, zener diodes, high resistivity poly, plus a variety of npn/pnp bipolar transistors, capacitors, diodes and resistors. The high voltage transistors include optimized NLDMOS and high voltage PMOS 40/5 V, 40/12 V, 24/5 V and 12/12 V transistors. The high−performance / low−power 5 V digital library and one−time programmable (OTP) element offered in the baseline ONC25 technology are available as well. ONBCD25 provides the flexibility to implement a variety of mixed−signal functions in a product design. |
C3/D3 | The C3/D3 process family is an ideal 0.35µm low cost solution to mixed−signal designs requiring a moderate amount of digital logic (up to 250 k gates). Optimized for 3.3 V operation with added devices for 5 V capability, high−performance, low−power, and mixed−signal digital libraries, and mixed−signal features such as poly−poly capacitors, Schottky diodes, and high resistivity poly. C3/D3 provides the flexibility to implement a variety of mixed−signal applications. |
I3T25
| Providing the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage, the Intelligent Interface Technology I3T25 process from ON Semiconductor is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. Featuring high voltage devices up to 18 V as well as digital and analog operation at 3.3 V and 12 V, the I3T25 process family features a wide range of capabilities in a single IC. |
I3T50
| The ON Semiconductor Intelligent Interface Technology I3T50 process is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. It provides the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage. Featuring high voltage devices up to 40 V as well as digital and analog operation at 3.3 V, the I3T50 process family is the first to use deep trenches for isolating high voltage devices. |
I3T80
| Providing the density of a 0.35µm digital process, analog/mixed−signal capability and high voltage, the ON Semiconductor Intelligent Interface Technology I3T80 process is the answer to the need for increased digital content in a mixed−signal and/or high voltage environment. Featuring high voltage devices up to 80 V as well as digital and analog operation at 3.3 V, the I3T80 process family features a wide range of capabilities in a single IC. |
C5 | Optimized for 5 V mixed−signal applications, the C5 process family from ON Semiconductor offers a medium−density, high−performance mixed−signal technology capable of integrating complex analog functions, digital content and 20 V capability. This process delivers the advantages of a dedicated mixed−signal 0.5µm process without the costs associated with the extra mask steps of a BCD process. Low−voltage transistors are also available for the 0.5µm process making it well−suited for low−power applications. |
The design kits provided by ON Semiconductor include a comprehensive suite of libraries enabling efficient design of leading-edge mixed-signal and smart power ASICs.
